https://www.selleckchem.com/products/am-095.html
Semiconductor nanowire field-effect transistors represent a promising platform for the development of room-temperature (RT) terahertz (THz) frequency light detectors due to the strong nonlinearity of their transfer characteristics and their remarkable combination of low noise-equivalent powers (100 V/W). Nano-engineering an NW photodetector combining high sensitivity with high speed (sub-ns) in the THz regime at RT is highly desirable for many frontier applications in quantum optics and nanophotonics, but this requires a clear understand
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