https://www.selleckchem.com/pr....oducts/Benserazide-h
Laser melt annealing of amorphous silicon (a-Si) and subsequent recrystallization of a-Si are essential processes for successfully implementing vertical NAND (V-NAND) flash memory devices developed based on the cell-over-periphery (COP) structure. The aim of this study was to develop the numerical model for the laser melting process of a-Si used in V-NAND COP structure. In this study, the numerical simulation predicting the temperature distribution induced by multipath laser scanning and beam overlapping was
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