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https://www.selleckchem.com/JAK.html
In this paper, we propose a one-step procedure for fabricating a solution-gated ultrathin channel indium tin oxide (ITO)-based field-effect transistor (FET) biosensor, thus providing an ″all-by-ITO″ technology. A thin-film sheet was placed on both ends of a metal shadow mask, which were contacted with a glass substrate. That is, the bottom of the metal shadow mask corresponding to the channel was slightly raised from the substrate, resulting in the creeping of some particles into the gap during sputtering. Owing to this modified metal shadow mask, a